Simulation of bipolar charge transport in graphene on h-BN

• Marco Coco ^[1] ; Giovanni Nastasi ^[2]
  1. [1] University of Florence

     University of Florence

     Firenze, Italia

     
  2. [2] University of Catania

     University of Catania

     Catania, Italia

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 39, Nº 2, 2020, págs. 449-465
• Idioma: inglés
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• Resumen

  • The purpose of this paper is to simulate charge transport in monolayer graphene on a substrate made of hexagonal boron nitride (h-BN). This choice is motivated by the fact that h-BN is one of the most promising substrates on account of the reduced degradation of the velocity due to the remote impurities