Two-dimensional semiconductor device modeling on personal microcomputer

• Autores: Marek Turowski
• Localización: Mini and Microcomputers and their applications / Emilio Luque Fadón (ed. lit.), 1988, págs. 25-28
• Idioma: inglés
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• Resumen

  • The use of professional microcomputer allowed to develop the user-oriented program for two-dimensional (2D), modelling and simulation of semiconductor devices, whit interactive data and results monitoring. The special attention was paid to the choice of the relevant numerical methods wich are applicable in a limited microcomputer enviroment.

    The authors´s program for IBM PC/XT compatible microcomputer, written in Pascal languaje, needs as a data the device shape description (not only rectangular areas) and the user-delivered doping profile, program generates automatically a discretization mesh, up to 1000 nodes, using the modified finite difference method, called "finite boxes". During the calculations the mesh is refined several times according to local discretization error distribution. The discretized system of transport equations is linearized with a Newton algorithm and solved sequentially. For the linear system solution the direct sparse matrix method is applied with the "minimum-degree" row and column reordering to minimize the fill-in.

    As a result the distribution od electric potential, electric field, electron and hole concentration can be displayed. The integrals of the currents over the device contacts are also available. The convergence time for one operating point is from 40 minutes to 2 hours.