Resumen de Electric Field Transport in Nanostructures
Raúl José Martín Palma, José Manuel Martínez Duart
This chapter reviews the transport properties in nanostructures due to the action of electric fields. In particular, the motion of the charge carriers in 2D quantum heterostructures parallel and perpendicular to the potential barriers at the interfaces will be discussed. Besides, we will see that quantum transport in nanostructures shows some new unexpected effects including resonant tunneling (RT), quantized conductance, and Coulomb blockade. In this regard, several advanced micro- and optoelectronic devices make use of these effects, including modulation-doped field-effect transistors, RT diodes and transistors, high-frequency oscillators and amplifiers, and single-electron transistors.
