Resumen de Analysis of bipolar amplification due to heavy-ion irradiation in 45 nm FDSOI MOSFET with thin BOX and ground plane
Single event transient (SET) due to heavy-ion strike is one of the serious reliability issues when the MOSFET is scaled down to advanced technology nodes. SOI technology is more immune to SET than bulk technology due to its smaller collection volume and buried oxide (BOX). The device structure modification using thin BOX and ground plane (GP) doping will aid further scaling of SOI MOSFET. In this paper, the bipolar amplification due to heavy-ion strike is analysed for both thick BOX device and thin BOX device with GP in 45 nm SOI technology. The bipolar gain is reduced by optimizing GP doping. The effect of substrate bias and supply voltage scaling on the bipolar gain is also analysed. The replacement of thick BOX with thin BOX (without GP) reduces the bipolar gain by 3.2 times for LET = 0.2 MeV/(mg/cm2). The inclusion of a GP layer underneath the thin BOX reduces the bipolar gain further by 2.3 times. This lower bipolar amplification of thin BOX with GP device makes it to be less sensitive to the heavy-ion strike than the one with thick BOX.
