Noise parameters of HEMTs: analysis of their properties from a circuit model approach

• A. Caddemi ^[1] ; M. Sannino ^[1]
  1. [1] Dipartimento di Ingegneria Elettrica, Università di Palermo, Italia
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 15, Nº 3, 1996, págs. 47-57
• Idioma: inglés
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• Resumen

  • Noise parameters of high electron mobility transistors (HEMT) at microwave frequencies are a subject of active research since the knowledge of their performance is of key importance for the use of these devices for designing low‐noise amplifiers. Employs a simple noise model to derive the analytical expressions for the device noise parameters F0, Γ0 and N in terms of the electrical elements associated with the basic equivalent circuit of an HEMT. Analyses such expressions to establish some fundamental relationships, as well as the expected noise performance of the device when the parasitic elements representing package effects are included.