Simulation of the hydrodynamic model of semiconductor devices by a finite element method

• Michel Fortin ^[1] ; Geng Yang ^[1]
  1. [1] Département de Mathématiques et de Statistique, Université Laval, Canadá
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 15, Nº 3, 1996, págs. 4-21
• Idioma: inglés
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• Resumen

  • Proposes a finite element method for numerical simulation of the hydrodynamic model of semiconductor devices. Presents some scaling factors and a variational formulation. Uses the P1 ‐ isoP2 element to discretize this formulation and the GMRES (Generalized Minimum RESidual) algorithm to solve the associated non‐linear system. Proposes an artificial viscous term to stabilize the non‐linear system. Gives a choice for an initial solution. Presents the numerical solutions for n+ ‐ n ‐ n+ diodes and 0.25μm gate length Si MESFETs. Calculates a shock wave at 300K. Observes velocity overshoot phenomenon and the effect of heat conduction term.