Temperature dependent noisy models of pseudomorphic HEMTs

• A. Caddemi ^[1] ; M. Sannino ^[1] ; G. Mogavero ^[1]
  1. [1] Dipartimento di Ingegneria Elettrica — Università di Palermo Laboratorio di Elettronica delle Microonde, Italia
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 13, Nº 4, 1994, págs. 807-815
• Idioma: inglés
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• Resumen

  • From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8–16 GHz frequency range, the noisy small‐signal model of a pseudomotphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to −50 °C) by placing the device text fixture in a thermo‐controlled chamber. The model effectiveness has then been tested by determining the circuit element values at the different temperatures and by observing the model noise performance.