A numerical model of heterojunction bipolar transistor high frequency performance for device design

• G. Khrenov ^[1] ; V. Ryzhii ^[1] ; S. Kartashov ^[1]
  1. [1] University of Aizu

     University of Aizu

     Japón

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 13, Nº 4, 1994, págs. 671-676
• Idioma: inglés
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• Resumen

  • An efficient numerical model of heterojunction bipolar transistor high frequency performance is proposed. The developed model is based on the ensemble Monte Carlo particle simulator. The validity and accuracy of the model are verified by comparing of the results of the model prediction with the experimental dates. The role of the thickness of the collector junction on the transistor cut‐off frequency is investigated and it is found that transistor cut‐off frequency as a function of the collector thickness has a maximum.