Monte Carlo modelling of 0.1µm delta-doped MOSFETs

• R.W. Kelsall ^[1] ; A.G. O'Neill ^[1]
  1. [1] University of Leeds

     University of Leeds

     Reino Unido

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 13, Nº 4, 1994, págs. 653-659
• Idioma: inglés
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• Resumen

  • A 2‐dimensional multilayer MOSFET simulator has been developed, based on self‐consistently coupled ensemble Monte Carlo and Finite Element Poisson Solver algorithms. The simulator is used to investigate electron transport in 0.1µm delta‐doped n‐channel MOSFETs. The simulations demonstrate a buried channel mode of operation in these devices, whereby conduction occurs primarily along the delta‐doped layer. In this mode, the electron density at the Si/SiO2 interface is significantly reduced, implying corresponding reductions in interface scattering and hot electron degradation.