Accuracy of modelling non-equilibrium electron transport in silicon using hydrodynamic transport equations

• Ming-C. Cheng ^[1] ; Ying Wen ^[1]
  1. [1] University of New Orleans

     University of New Orleans

     City of New Orleans, Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 13, Nº 4, 1994, págs. 579-589
• Idioma: inglés
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• Resumen

  • Accuracy of hydrodynamic transport equations using the energy‐dependent relaxation times has been studied for electron transport in Si 〈100〉. The concept of the hydro‐kinetic transport model is used to describe non‐equilibrium electron transport phenomena and to examine the validity for the assumption of energy‐dependent relaxation times. It has been shown that under the influence of a drastic increase in field the relaxation times might also strongly depend on the average velocity near the peak of strong velocity overshoot. In addition, the velocity dependence is found to be more pronounced at lower temperatures in Si 〈100〉.