Simulation of defect assisted tunneling and its effect on I-V characteristics in resonant tunneling diodes

• Sangyong Lee ^[1] ; Mark H. Weichold ^[1] ; Donald L. Parker ^[1] ; Gregory F. Spencer ^[1]
  1. [1] Institute for Solid‐State Electronics, Department of Electrical Engineering, USA
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 12, Nº 4, 1993, págs. 525-530
• Idioma: inglés
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• Resumen

  • This paper presents a self‐consistent I‐V simulation technique for an RTD with defect wells placed inside the barriers. The motivation of this paper was to model the excess valley current by a defect‐assisted tunneling mechanism. We have calculated the transmission coefficients and I‐V characteristics self consistently with Poisson's equation coupled to quantum mechanical tunneling through the barrier. The shape of transmission coefficient was broadened and greatly enhanced in the off‐resonance region when the defect well was introduced in the barriers. Our results gave a good qualitative estimation of the valley current and the peak to valley current ratio (PVCR).