Evanescent modes and scattering effects on resonant tunneling in zero dimensional nanostructures:: A scattering matrix approach

• Chomsik Lee ^[1] ; Mark H. Weichold ^[1]
  1. [1] Texas A&M University

     Texas A&M University

     Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 12, Nº 4, 1993, págs. 517-524
• Idioma: inglés
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• Resumen

  • Theoretical calculations of tunneling characteristics of the Gated Resonant Tunneling Diode (GRTD) aie obtained in low dimensionality using a scattering transfer matrix approach. In the bias conditions whereby the GRTD reaches zero‐dimension in the well region, we consider attractive and repulsive perturbation potential (Vsc) of impurity or defect scattering in emitter and well regions. We describe the scattering matrices using the presence of evanescent, or nonpropagating, modes in different lateral confinement structure. Numerical solutions to the two‐dimensional Poisson equation and the continuity equation are used to calculate the lateral depletion region and carrier concentrations by the finite difference method. Electron transport in double‐barrier structure is calculated by a self‐consistent approach.