Simulation of field emission from silicon:: self-consistent corrections using the wigner distribution function

• K.L. Jensen ^[1] ; A.K. Ganguly ^[1]
  1. [1] United States Naval Research Laboratory

     United States Naval Research Laboratory

     Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 12, Nº 4, 1993, págs. 507-515
• Idioma: inglés
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• Resumen

  • In this work we outline the methodology by which the Wigner Distribution Function (WDF) may be applied to the simulation of field emission from silicon into the vacuum so that the effects of self‐consistently calculated band bending and scattering on the current‐field characteristics may be assessed. For the first time, current saturation‐like effects are simulated. We analyze this in light of the behavior of the self‐consistent potential and density profiles at high applied fields.