Dyna - a hydrodynamic simulator for two-valley semiconductor devices

• Yaxi Zhang ^[1] ; M. El Nokali ^[1]
  1. [1] University of Pittsburgh

     University of Pittsburgh

     City of Pittsburgh, Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 12, Nº 4, 1993, págs. 487-495
• Idioma: inglés
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• Resumen

  • A hydrodynamic semiconductor device simulator, DYNA, is introduced. A new relaxation time evaluation scheme for two‐valley semiconductors is proposed to account for the dependence of the electron mobility on the impurity scattering. Some robust solution methods are used in the simulator for treating the highly nonlinear system of equations. The simulation results for a nonuniformly‐doped GaAs MESFET are also shown.