The use of realistic bandstructure in impact ionisation calculations for wide bandgap semiconductors:: application to INP and GaAs

• S.P. Wilson ^[1] ; S. Brand ^[1] ; A.R. Beattie ^[1] ; R.A. Abram ^[1]
  1. [1] Durham University

     Durham University

     Reino Unido

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 12, Nº 4, 1993, págs. 457-473
• Idioma: inglés
• Enlaces
  • Texto completo
• Resumen

  • A non‐local pseudopotential model is used to generate realistic bandstructure for InP and GaAs. This is used to calculate the thresholds for impact ionisation and ionisation rates in these materials as a function of direction in wavevector space. Results are presented for a range of transitions.