Non-equilibrium multi-valley electron distribution functions in GaAs

• Ming-C. Cheng ^[1] ; Rambabu Chennupati ^[1]
  1. [1] University of New Orleans

     University of New Orleans

     City of New Orleans, Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 12, Nº 4, 1993, págs. 435-446
• Idioma: inglés
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• Resumen

  • The concept of the evolution of the distribution function is used to derive an energy‐scale distribution that is able to describe transport phenomena, including inter‐valley transfer effect, in the scale as small as the energy relaxation time. The energy‐scale distribution is used to study the evolution of electrons in n‐type GaAs under the influence of rapid change in field. Results indicate that, near the peak of strong velocity overshoot or the bottom of pronounced undershoot in the Γ valley caused by the rapid change in field, the energy‐scale distribution can not respond as fast as the distribution function calculated from the Monte Carlo method. The average velocity resulting from the energy‐scale distribution therefore leads to less pronounced overshoot and undershoot than those obtained from the Monte Carlo method. However, since velocity overshoot and undershoot are not pronounced in the L‐valleys, the L‐valley energy‐scale distribution is in excellent agreement with that determined by the Monte carlo simulation.