Numerical simulation of the thermal oxidation of polycrystalline silicon

• G.V. Gadiyak ^[1] ; J.L. Korobitsina ^[1] ; V.I. Kramarenko ^[1]
  1. [1] Institute of Theoretical and Applied Mechanics Siberian Branch of Russian Academy of Sciences, Rusia
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 12, Nº 4, 1993, págs. 417-422
• Idioma: inglés
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• Resumen

  • The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide, equations system for the deformation of oxide and nitride mask. The numerical calculations of the reverse L‐shape sealed polybuffer LOCOS are presented.