Two-dimensional simulations of Cutoff frequency characteristics for AlGaAs/GaAs HBTs with planar structures

• K. Horio ^[1] ; A. Nakatani ^[1]
  1. [1] Shibaura Institute of Technology

     Shibaura Institute of Technology

     Japón

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 12, Nº 4, 1993, págs. 331-340
• Idioma: inglés
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• Resumen

  • Cutoff frequency ƒT characteristics for AlGaAs/GaAs HBTs with planar structures are studied, by two‐dimensional simulation, with an emphasis placed on their dependences on the collector parameters. It is shown that the sub‐collector resistance becomes an important factor to achieve a higher ƒT in the high current region, and so it should be made as low as possible. Effects of introducing semi‐insulating external collectors are also studied. It is shown that the introduction of semi‐insulating layer is effective to improve the ƒT characteristics provided that it is slightly away from the intrinsic collector region.