A study of the influence of hydrodynamic model effects on characteristics of silicon bipolar transitors

• A.D. Sadovnikov ^[1] ; D.J. Roulston ^[1]
  1. [1] University of Waterloo

     University of Waterloo

     Canadá

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 12, Nº 4, 1993, págs. 245-262
• Idioma: inglés
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• Resumen

  • With decreasing vertical dimensions of the bipolar transistor (BJT), non‐local effects of nonuniform electron temperature should have a significant effect on the BJT characteristics. These effects can be simulated using a hydrodynamic (HD) model of the BJT, in which the equation of energy balance is added to the set of Poisson's and continuity equations.