Stationary solutions of hydrodynamic models for semiconductor device simulation

• A. Majorana ^[1] ; G. Russo ^[1]
  1. [1] University of Catania

     University of Catania

     Catania, Italia

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 12, Nº 1, 1993, págs. 81-93
• Idioma: inglés
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• Resumen

  • Two hydrodynamic models of a semiconductor device are considered. The first takes into account thermal and collisional effects, while neglecting viscous terms, which are included in the second. A qualitative analysis of stationary one‐dimensional solutions is performed and a numerical comparison is presented.