Fast models for statistical process/device simulation

• Andrzej Pfitzner ^[1] ; Miroslaw Grygolec ^[1]
  1. [1] Warsaw University of Technology

     Warsaw University of Technology

     Warszawa, Polonia

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 11, Nº 4, 1992, págs. 545-548
• Idioma: inglés
• Enlaces
  • Texto completo
• Resumen

  • A new method for statistical process/device modeling has been developed and applied to determine the impurty profiles and the current‐voltage characteristics of the p‐n junction. This method combines accurate numerical solutions of the transport equations with internally calibrated fast analytical (semi‐empirical) models.