Effects of lattice temperature in MOSFET analysis under non-isothermal conditions
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Hirokazu Hayashi [1] ; Ryo Dang [1]
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[1] Hosei University
Hosei University
Japón
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- Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 11, Nº 4, 1992, págs. 489-503
- Idioma: inglés
- Enlaces
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Resumen
Effects of lattice temperature on MOSFET characteristics and a rough distribution of carrier temperature, are studied using a non‐isothermal device simulator which also includes the effect of temperature gradient on the current density. To clarify the mechanism of the increase in lattice temperature, the source of heat generation is investigated. We have confirmed that the increase in lattice temperature results mainly from the generation of Joule heat, representing the product of the electric field and the electron current density. We also found that, as the gate length becomes short, the lattice temperature rises exponentially. In addition, it is found that the lattice temperature shows a localized increase of 77 degrees under normal biasing conditions in the MOSFET with a gate length of 0.5[ μ m].
