Influence of forward scattering on nonequilibrium transport of electrons in compound semiconductors

• Ming C. Cheng ^[1]
  1. [1] University of New Orleans

     University of New Orleans

     City of New Orleans, Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 11, Nº 4, 1992, págs. 481-488
• Idioma: inglés
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• Resumen

  • Influence of forward scattering, including ionized‐impurity and polar optical‐phonon scattering, on electron transport phenomena in a 3‐valley n‐type GaAs model subjected to a rapid change in field is studied. It is shown that the macroscopic effective mass of electrons in a nonparabolic band structure is smaller than the energy‐dependent effective mass, which is usually assumed for modeling of GaAs devices, during the interval of velocity overshoot when strong forward scattering is involved. As a consequence, the hydrodynamic transport model, where the macroscopic effective mass is assumed energy dependent, leads to a smaller overshoot velocity.