On the uniqueness of the solution to the drift-diffusion model in semiconductor analysis

• Abdeljalil Nachaoui ^[1] ; Nabil R. Nassif ^[1]
  1. [1] Institut de Mathématiques et d' Informatique, Univerité de Nantes and IRMAR, Université de Rennes, Francia
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 11, Nº 3, 1992, págs. 377-390
• Idioma: inglés
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• Resumen

  • This paper is concerned with the analysis of global uniqueness of the solution to the drift—diffusion models, for stationary flow of charges carriers in semiconductor devices. Two uniqueness cases are found. Firstly, small applied voltages with a proof introducing new ‘quasi‐monotony condition’ verified for solutions in W and not necessarily in H. Secondly, large applied voltage to the semiconductor with small 2D domain, and not large doping functions. These uniqueness cases allow the construction of algorithms that yield converging sequences of solutions.