GaAs CCD charge transfer simulation

• Richard E. Poore ^[1] ; Peter B. Kosel ^[1]
  1. [1] University of Cincinnati

     University of Cincinnati

     City of Cincinnati, Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 10, Nº 4, 1991, págs. 611-620
• Idioma: inglés
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• Resumen

  • A computer program for the solution of the single carrier semiconductor equations in GaAs has been developed to simulate charge storage and transfer in GaAs charge‐coupled devices. An uncoupled Newton method is used to solve the steady state problem, and a stable, uncoupled method is used for the transient solution. Using transient simulation, the transfer of a charge packet from well to well can be simulated over time. By comparing the size of the charge packet before and after the transfer, information on the charge transfer inefficency can be derived.