Effects of junctions on conduction properties of GaAs n-i-n structures including deep levels

• K. Horio ^[1] ; H. Yanai ^[1]
  1. [1] Shibaura Institute of Technology

     Shibaura Institute of Technology

     Japón

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 10, Nº 4, 1991, págs. 563-572
• Idioma: inglés
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• Resumen

  • I‐V characteristics of GaAs n‐i‐n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse‐biased n‐i junction becomes a cause of steep current rise when an acceptor density in the i‐layer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs n‐i‐n structures are also simulated, and are shown to be strongly affected by existence of n‐i junctions.