Monte Carlo simulation of SiGe/Si MESFETs

• M. Gokhale ^[1] ; A.F.M. Anwar ^[1] ; R.D. Carrol ^[1] ; F.C. Jain ^[1]
  1. [1] ESE Department, The University of Connecticut Storrs, USA
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 10, Nº 4, 1991, págs. 547-552
• Idioma: inglés
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• Resumen

  • The current‐voltage (Id—Vd) characteristics and microwave performance of Si1−xGex MESFETs are discussed. The 2D Poisson's equation along with the drift and diffusion equation are solved using a finite difference technique to calculate device parameters such as gm and fT. The low field carrier mobility is computed by using a single partice Monte Carlo program. In the simulation all relevant scattering mechanisms are accounted for.