L.Y. Chen, G. Levine, J. Yang, C.S. Ting
A stochastic process with repulsive correlation is proposed to simulate the nonequilibrium electronic transport through microstructures under finite bias voltage. Since an electron needs to stay a finite time τ0 on a channel state while traversing the constriction structure, within τ0 other electrons can not follow up through the same channel state because of the Pauli exclusion. This quantum effect induces a time correlation and suppresses the shot noise. The Monte Carlo results fairly compare with experimental measurements.
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