Semiconductor device modelling for heterojunctions structures with mixed finite elements

• F. Hecht ^[1] ; A. Marrocco ^[1] ; E. Caquot ^[1] ; M. Filoche ^[1]
  1. [1] French Institute for Research in Computer Science and Automation

     French Institute for Research in Computer Science and Automation

     Arrondissement de Versailles, Francia

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 10, Nº 4, 1991, págs. 425-438
• Idioma: inglés
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• Resumen

  • Numerical simulation of the static semiconductor device equations using mixed finite element for the approximation and A.D.I. techniques (Douglas‐Rachford with local time steps) for the solution is presented in this paper. The formulation with electrostatic potential φ and quasi‐Fermi levels φn,φp is used.