2D process simulation of dopant diffusion in polysilicon

• SK Jones ^[1] ; A Gérodolle ^[1]
  1. [1] GEC‐Marconi Materials Technology Ltd, Reino Unido
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 10, Nº 4, 1991, págs. 401-410
• Idioma: inglés
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• Resumen

  • A new model to describe dopant diffusion and recrystallisation in polycrystalline silicon during thermal treatment is presented. The full 3D microstructure of the material is considered and a local homogenisation approximation introduced. A parallel diffusion model for diffusion in grain boundaries and grain interior with grain growth and segregation is developed within this approximation. The model is solved in a 2D vertical section using a finite element discretisation. An example of the application of this model to a one micron bipolar transistor is given.