Bulk image effects of photoresist in three-dimensional profile simulation

• Tatsumi Ishizuka ^[1]
  1. [1] Fuji Research Institute Corporation, Japón
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 10, Nº 4, 1991, págs. 389-400
• Idioma: inglés
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• Resumen

  • 3D bulk image effects in high‐NA lens lithography are studied through 3D exposure and development simulations by applying a Mack model to the 3D exposure process.