A comparison between the heterojunction bipolar transistor power performance computed using large signal "Y" parameters and a full time domain simulation

• Douglas A. Teeter ^[1] ; Jack R. East ^[1] ; Richard K. Mains ^[1] ; George I. Haddad ^[1]
  1. [1] University of Michigan–Ann Arbor

     University of Michigan–Ann Arbor

     City of Ann Arbor, Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 10, Nº 4, 1991, págs. 301-309
• Idioma: inglés
• Enlaces
  • Texto completo
• Resumen

  • This model is intended to simulate the large signal performance of heterojunction bipolar transistors for use in high power, high frequency, oscillators, amplifiers, and mixers. A temperature model which includes velocity overshoot and carrier energy effects has been developed. The model is used to calculate the large signal “Y” parameters of an HBT. A comparison is made between predicted power performance using the “Y” parameters and a fully numerical, time domain computation. Advantages and disadvantages of each approach are given.