A transport model for carriers in small spatial/temporal scale compound semiconductor devices

• Ming Cheng Cheng ^[1] ; E.E. Kunhardt ^[1]
  1. [1] University of New Orleans

     University of New Orleans

     City of New Orleans, Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 10, Nº 4, 1991, págs. 277-287
• Idioma: inglés
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• Resumen

  • A non‐equilibrium multi‐valley transport model for carriers in compound semiconductor devices has been developed. This macroscopic transport model provides an efficient scheme for device modeling, and can overcome the difficulty in evaluating the relaxation times in multi‐valley conservation equations without a priori assumption of the displaced‐Maxwellian distribution. This model has been successfully applied to electron transport in GaAs subjected to rapidly time‐varying fields. The results have suggested that the macroscopic effective mass of electrons might be strongly dependent on average velocity.