Tailoring the two dimensional electron gas distribution by selective doping of the quantum well

• A.F.M. Anwar ^[1] ; R.D. Carrol ^[1]
  1. [1] ESE Department, The University of Connecticut Storrs, USA
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 10, Nº 4, 1991, págs. 269-275
• Idioma: inglés
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• Resumen

  • The effect of doping the quantum well (QW) on the distribution of two dimensional electron gas (2DEG) in high electron mobility transistors (HEMT) is discussed. In con‐ventional HEMTs the QW is unintentionally doped to utilize the higher mobility of the QW material. The overlap between the carrier and the dopant distribution may be minimized by selectively doping the QW.