3D numerical simulation of transient processes in semiconductor devices

• A.I. Adamsone ^[1] ; B.S. Polsky ^[1]
  1. [1] Latvian State Institute of Wood Chemistry

     Latvian State Institute of Wood Chemistry

     Letonia

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 10, Nº 3, 1991, págs. 129-139
• Idioma: inglés
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• Resumen

  • A half‐implicit absolutely stable method for 3D simulation of the transient processes in semiconductor devices is proposed. The calculations of transient processes in bipolar transistor were carried out and were compared with the results of 2D simulation.