A splitting scheme for a drift-diffusion model of semiconductors

• Yu A. Berezin ^[1] ; O.E. Dmitrieva ^[1]
  1. [1] Institute of Theoretical and Applied Mechanics

     Institute of Theoretical and Applied Mechanics

     Rusia

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 7, Nº 4, 1988, págs. 227-232
• Idioma: inglés
• Enlaces
  • Texto completo
• Resumen

  • In this paper, the authors describe a more efficient and economical method for a splitting scheme for drift‐diffusion models for semiconductors. It enables one to calculate stationary and non‐stationary processes in semiconductor plasma.