Numerical solution of the hydrodynamic model for a one-dimensional semiconductor device

• M. Rudan ^[1] ; F. Odeh ^[1] ; J. White ^[1]
  1. [1] IBM Research – Thomas J. Watson Research Center

     IBM Research – Thomas J. Watson Research Center

     Town of Yorktown, Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 6, Nº 3, 1987, págs. 151-170
• Idioma: inglés
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• Resumen

  • A numerical implementation of a discretization scheme of the hydrodynamic model for submicron devices is described and applied to a one‐dimensional ballistic diode. The performance of the numerical method and the physical results of the simulation for different biases and lattice temperatures, and a brief comparison to Monte Carlo simulations, are also given.