A model for coupled dopant diffusion in silicon

• N.E.B. Cowern ^[1] ; D.J. Godfrey ^[1]
  1. [1] GEC Research Limited, Hirst Research Centre, Reino Unido
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 6, Nº 1, 1987, págs. 59-63
• Idioma: inglés
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• Resumen

  • The simulation of coupled dopant diffusion in silicon is becoming increasingly important in integrated circuit technology, as device dimensions are reduced and efforts are made to reduce process complexity. Thus a need exists for accurate simulation over a wide range of diffusion conditions, based on necessity on well tested, predictive physical models.