Self-consistent I-V characteristics of ultra-small devices

M. Cahay ^[1] ; M. McLennan ^[1] ; S. Datta ^[1] ; M.S. Lunstrom ^[1]
1. [1] Purdue University
  
  Purdue University
  
  Township of Wabash, Estados Unidos
Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 6, Nº 1, 1987, págs. 53-57
Idioma: inglés
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Resumen
- A method is presented for the incorporation of space‐charge effects into the analysis of one‐dimensional devices. At each bias, solutions of Schrödinger's and Poisson's equations are performed iteratively, until the solutions converge. Some difficulties in the calculation of electron density are noted, and an algorithm is described to insure an accurate computation. Finally, the current‐voltage characteristic of a recently fabricated resonant tunneling device is presented, to stress the importance of space‐charge effects.