Physics for models of gallium arsenide devices

• Herbert S. Bennett ^[1] ; Jeremiah R. Lowney ^[1]
  1. [1] Semiconductor Electronics Division, National Bureau of Standards, USA
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 6, Nº 1, 1987, págs. 31-36
• Idioma: inglés
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• Resumen

  • Numerically simulating the behavior of GaAs devices requires a model for the distorted densities of states, band edge shifts, ΔΕc and ΔΕv, and effective intrinsic carrier concentrations, nie. The subscripts c and v denote the conduction and valence bands, respectively. Klauder's self‐energy methods (third‐level and fifth‐level) are applied to calculate the effects of carrier‐dopant ion interactions on the densities of states for GaAs. The effects of carrier‐carrier interactions have been calculated according to the theory of Abram et al. modified for 300 K. These calculations span most of the range of densities encountered in GaAs devices. This range is 5 × 1016 cm−3 to 1019 cm−3 for n‐type GaAs and from 1018 cm−3 to 1020 cm−3 for p‐type GaAs. We present in this paper theoretical data on how ΔΕc, ΔΕv, and nie vary with dopant densities. The variations with dopant and/or carrier densities of the distorted densities of states, Fermi energies screening radii, and first Born shifts will be given in a future publication.