Boundary limited high field transport in ultra small devices

• A. Al-Omar ^[1] ; J.P. Krusius ^[1]
  1. [1] Cornell University

     Cornell University

     City of Ithaca, Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 6, Nº 1, 1987, págs. 3-9
• Idioma: inglés
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• Resumen

  • Boundary limited transport in small compound semiconductor devices is studied within the self‐consistent Monte Carlo method. New stable microscopic models fully accounting for stochastic carrier exchange at boundaries have been developed for ohmic, tunneling, and Schottky barrier boundaries. These new models are demonstrated with applications to the one‐dimensional GaAs resistor, N+‐N‐N+ diode and the N+‐N Schottky diode.