Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices

• M. Rudan ^[1] ; F. Odeh ^[1]
  1. [1] IBM Research – Thomas J. Watson Research Center

     IBM Research – Thomas J. Watson Research Center

     Town of Yorktown, Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 5, Nº 3, 1986, págs. 149-183
• Idioma: inglés
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• Resumen

  • A discretization technique is proposed for the multi‐dimensional, steady‐state hydrodynamic model of semiconductor devices, and a derivation of the model's appropriate boundary conditions is given. The model includes the complete balance equations for charge, momentum and energy, coupled with Poisson's equation, thus accounting for both diffusion and convection phenomena. The technique, like the Scharfetter—Gummel scheme for the simpler drift‐diffusion model, provides an efficient method for solving the hydrodynamic equations, allowing for a more detailed investigation of carrier dynamics in semiconductor devices.