Finite element simulation of hall effect in semiconductors

• Etsumasa Kameda ^[1] ; Yukio Kagawa ^[1]
  1. [1] Department of Electrical Engineering, Toyama National College of Technology, Japón
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 5, Nº 3, 1986, págs. 137-147
• Idioma: inglés
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• Resumen

  • Materials with anisotropic conductivity are frequently used as sensors in electrical industries. In this paper, an anisotropic conductivity tensor to express Hall effect in n‐type semiconductors is derived and its steady‐current field is solved using the finite element method. Some numerical examples are given and comparison with measured data is discussed.