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Analysis of a discretization algorithm for stationary continuity equations in semiconductor device models, II

  • M.S. Mock [1]
    1. [1] Hebrew University of Jerusalem

      Hebrew University of Jerusalem

      Israel

  • Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 3, Nº 3, 1984, págs. 137-149
  • Idioma: inglés
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  • Resumen
    • In a previous paper [COMPEL, Vol. 2, No. 3, pp. 117–139], an analysis was presented of a discretization procedure for a class of elliptic problems, including the Scharfetter‐Gummel method for the continuity equations of stationary semiconductor device models. Here, the previous results are extended in two directions: firstly, to such problems in an arbitrary number of dimensions and, secondly, to include the computation of suitable moments, as opposed to point‐values, of the carrier density distributions.


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