Israel
In a previous paper [COMPEL, Vol. 2, No. 3, pp. 117–139], an analysis was presented of a discretization procedure for a class of elliptic problems, including the Scharfetter‐Gummel method for the continuity equations of stationary semiconductor device models. Here, the previous results are extended in two directions: firstly, to such problems in an arbitrary number of dimensions and, secondly, to include the computation of suitable moments, as opposed to point‐values, of the carrier density distributions.
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