Simulation of coupled impurities diffusion under oxidizing conditions. Application to the optimization of the p-Wells in CMOS technology

• Y. Depeursinge ^[1] ; L. Guex ^[1] ; J.M. Moret ^[1] ; P. Weiss ^[1]
  1. [1] Laboratoire Suisse de Recherches Horlogères, Suiza
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 2, Nº 4, 1983, págs. 149-160
• Idioma: inglés
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• Resumen

  • We have simulated the technological processes for the well formation in CMOS technology. The general problem of coupled impurities diffusion under oxidizing conditions has been treated by the finite‐element method. The obtained results have been compared to measured profiles. The study of the influence of the technological parameters on the well's structures allowed us to optimize the lateral diffusion, as well as the effects of the field oxidation.