Sub-1 ns characterization methodology for transistor electrical parameter extraction

• Autores: Yiming Qu, Bing Chen, Wei Liu, Jinghui Han, Jiwu Lu, Yi Zhao
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 85, 2018, págs. 93-98
• Idioma: inglés
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• Resumen

  • In this paper, a novel method is proposed for the extraction of the transistor electrical parameters at the nanosecond timescale. This technique is enabled by an ultra-fast measurement (UFM) system that mainly contains the arbitrary waveform generator and a high-speed real-time oscilloscope. De-noising, synchronization and calibration problems are solved to improve the accuracy and precision. To circumvent the circuit problem at the drain of the transistors, a three-dimensional (3-D) I-V characterization solution is reported, and the ID-VG and ID-VD measured at sub-1 ns time are then drawn. The I-V curves measured in 800 ps show unprecedented agreement with that measured by a standard parameter analyzer and can be used for device/circuit modeling and reliability behaviors studies.