GaAsSb/InGaAs tunnel field effect transistor with a pocket layer

• Autores: Tzu-Yu Yu, Liang-Shuan Peng, Chun-Wei Lin, Yue-Ming Hsin
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 83, 2018, págs. 235-237
• Idioma: inglés
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• Resumen

  • This work proposes a new GaAs0.51Sb0.49/In0.53Ga0.47As heterojunction tunnel field effect transistor (HTFET) with a 6-nm In0.7Ga0.3As layer (pocket) between the source and channel. Compared with InGaAs homojunction TFETs, the proposed HTFET has a steeper subthreshold swing at a higher drain current, owing to its lower source-to-channel tunnel barrier height. It has a maximum on-state current of 11.98μA/μm at room temperature, which is more than ten times the on-state current obtained from an InGaAs homojunction TFET.