A review of pulsed NBTI in P-channel power VDMOSFETs

• Autores: D. Dankovic, I. Manic, A. Prijić, V. Davidovic, Z. Prijić, S. Golubovic, S. Djoric-Veljkovic, A. Paskaleva, D. Spassov, N. Stojadinovic
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 82, 2018, págs. 28-36
• Idioma: inglés
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• Resumen

  • Negative bias temperature instability (NBTI) is a phenomenon commonly observed in p-channel metal-oxide-semiconductor (MOS) devices simultaneously exposed to negative gate voltage and elevated temperature. In this study we provide overview of threshold voltage instabilities observed in commercial p-channel power vertical double-diffused MOS field-effect transistors (VDMOSFET) IRF9520 under the pulsed NBT stress conditions. These instabilities are caused by the NBT stress induced changes in oxide trapped charge and interface trap densities, and are more significant at higher voltages and/or temperatures. NBT stress induced degradation under the pulsed gate bias conditions is generally lower as compared to static stress. Less significant degradation of threshold voltage found after pulsed bias stressing is ascribed to the recovery effects. Partial recovery occurs during the low level of pulsed gate voltage as a consequence of the removal of recoverable component of degradation and is associated with passivation/neutralization of shallow oxide traps that have not been transformed into the deeper traps (permanent component). A specific approach has been applied in this study in order to assess the recoverable and permanent components of degradation in commercial p-channel power VDMOSFETs subjected to NBT stressing. Experimental data have been analysed in terms of the mechanisms responsible for changes in the densities of gate oxide charge and interface traps.