Effect of annealing atmosphere on optic-electric properties of ZnO thin films

• C. Bueno ^[1] ; M. Pacio ^[1] ; E. Osorio ^[2] ; R. Pérez ^[1] ; H. Juárez ^[1]
  1. [1] Benemérita Universidad Autónoma de Puebla

     Benemérita Universidad Autónoma de Puebla

     México

     
  2. [2] Cátedra-Universidad de Quintana Roo; México
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 63, Nº. 6, 2017, págs. 569-574
• Idioma: inglés
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• Resumen

  • In this work the study of the structural, morphologic characteristics, optical and electrical properties of the thin films of ZnO in temperatures and annealing atmospheres different was realized. The films were obtained by the sol-gel method, utilizing zinc acetate dihydrate as the precursor, monoethanolamine (MEA) as a stabilizing agent and 2-methoxyethanol as a solvent and deposited by spin-coating. The films were crystallized at 600, 800 and 1000◦C in oxygen and nitrogen atmospheres. The results obtained by XRD, SEM, photoluminescence and Hall effects of the ZnO films were related and depend strongly on the temperature and atmosphere annealing.