Modeling and simulation of the charge trapping component of BTI and RTS

• Autores: Thiago Hanna Both, Gabriela Firpo Furtado, Gilson Wirth
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 80, 2018, págs. 278-283
• Idioma: inglés
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• Resumen

  • Abstract Charge trapping phenomena is known to be a major reliability concern in modern MOSFETS, playing a significant role in aging through Bias Temperature Instability (BTI) and dominating low-frequency noise behavior. An electrical level modeling and simulation approach, valid at DC, AC and transient operation conditions is presented. Detailed statistical analysis is provided, aiming at proper modeling of BTI and noise variability, as well as to facilitate the understanding of physical mechanisms behind BTI and noise that are difficult to obtain otherwise. Case studies relevant for practical applications and understanding of the basic mechanisms are presented and critically discussed.